Dry Etching of Germanium with Laser Induced Reactive Micro Plasma

Abstract High-quality, ultra-precise processing of surfaces is high importance for high-tech industry and requires a good depth control processing, low roughness the machined surface as little possible subsurface damage but cannot be realized by laser ablation processes. Contrary, electron/ion beam, plasma processes dry etching are utilized in microelectronics, optics photonics. Here, we have demonstrated laser-induced (LIP) single crystalline germanium an optically pumped reactive plasma, resulting quality etching. A Ti:Sapphire (λ = 775 nm, E Pulse/max. 1 mJ, t 150 fs, f rep. kHz) has been used, after focusing with 60 mm lens, igniting temporary CF 4 /O 2 gas at near atmospheric pressure. Typical rate approximately ~ 100 nm / min less than 11 rms were found. The results studied dependence on pulse energy, time, – distance. mechanism process expected to chemical nature formation volatile products from reaction activated species surface. This proposed can provide new capabilities materials ultra—high precision machining semiconducting applied infrared machining.